SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 F.
FHP10N60 - N-Channel MOSFET
Free Datasheet http://www.Datasheet4U.com FHP10N60 FHP10N60 N MOS。 AC-DC ,DC-DC,HPMW 。 ★ ★ ★ 10A,600V,RDS(on)()0.7Ω 、 (TC =25℃) — .FQP10N60C - 600V N-Channel MOSFET
FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These .TSP10N60M - 600V N-Channel MOSFET
TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.P10N60 - SGP10N60
SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low c.P10N60C - FQP10N60C
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® Features • 9.5A, 600V, RDS(on) = 0.73Ω .HFP10N60U - N-Channel MOSFET
HFP10N60U HFP10N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology V.FQP10N60 - N-Channel MOSFET
FQP10N60-FQPF10N60 600V,10A N-Channel MOSFET General Description Product Summary The FQP10N60 & FQPF10N60 are fabricated using an advanced high vol.HFP10N60S - N-Channel MOSFET
HFP10N60S Nov 2007 HFP10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A FEATURES q Originative New Design q Superior Aval.PHP10N60E - PowerMOS transistors Avalanche energy rated
Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching .MDP10N60G - N-Channel MOSFET
MDP10N60G/MDF10N60G N-channel MOSFET 600V MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produc.WFP10N60 - N-Channel MOSFET
HIGH VOLTAGE N-Channel MOSFET WFP10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Ext.FDP10N60ZU - MOSFET
FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET FDP10N60ZU / FDPF10N60ZUT N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω April 2009 UniFETTM tm Features • RDS(on).FGP10N60UNDF - IGBT
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features • Short Circuit Rated 10 us • High Cur.HP10N60 - 600V N-Channel MOSFET
HF10N60 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gat.TSP10N60S - N-Channel MOSFET
TSP10N60S / TSF10N60S/TSB10N60S 600V N-Channel MOSFET September, 2013 SJ-FET TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET.TSP10N60C - 600V Heatsink N-Channel Type Power MOSFET
TSP10N60C ® TSP10N60C Pb Free Plating Product Pb 10.3A,600V Heatsink N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate .IXKP10N60C5M - CoolMOS Power MOSFET
Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultr.SLP10N60C - N-Channel MOSFET
SLP10N60C / SLF10N60C SLP10N60C / SLF10N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana.TMP10N60AG - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP10N60.TMP10N60A - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP10N60.