P10N60 Datasheet | Specifications & PDF Download

SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low c

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Free Datasheet http://www.Datasheet4U.com FHP10N60 N MOS 。 AC-DC ，DC-DC，HPMW 。 ★ 10A,600V,RDS(on)(）0.7Ω ★ 、 ★ FHP10N60 （TC=25℃） —

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP10N60 SDF10N60 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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IGP10N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Ju

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Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mod

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600V N-Channel MOSFETs PMP10N60M General Description These N-Channel enhancement mode power field effect transistors are using advanced super juncti

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 0.74Ω@VGS=10V ·100%

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MDP10N60G/MDF10N60G N-channel MOSFET 600V MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produc

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HIGH VOLTAGE N-Channel MOSFET      WFP10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Shor

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www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IX

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740

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FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET FDP10N60ZU / FDPF10N60ZUT N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω April 2009 UniFETTM tm Features • RDS(on)

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Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultr

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www.DataSheet4U.com SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field e

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

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www.DataSheet4U.com Preliminary data Low VCE(sat) IGBT High speed IGBT VCES IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 20 A 20 A V

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