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P10N60
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P10N60
SGP10N60
SGP10N60 SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand tim
Infineon Technologies Corporation
1
P10N60
C
FQP10N60C
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® Features • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44
Fairchild Semiconductor
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