P10N60 Datasheet | Specifications & PDF Download

Preliminary data SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low cond

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SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Sh

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www.DataSheet4U.com SGP10N60 SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low co

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SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low c

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Free Datasheet http://www.Datasheet4U.com FHP10N60 N MOS 。 AC-DC ，DC-DC，HPMW 。 ★ 10A,600V,RDS(on)(）0.7Ω ★ 、 ★ FHP10N60 （TC=25℃） —

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Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mod

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FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® Features • 9.5A, 600V, RDS(on) = 0.73Ω

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mod

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MDP10N60G/MDF10N60G N-channel MOSFET 600V MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produc

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These

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isc N-Channel MOSFET Transistor IXTP10N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche volt

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www.DataSheet4U.com Preliminary data Low VCE(sat) IGBT High speed IGBT VCES IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 20 A 20 A V

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HFP10N60U HFP10N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ V

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PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740

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Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IX

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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