Free Datasheet http://www.Datasheet4U.com FHP10N60 N MOS 。 AC-DC ，DC-DC，HPMW 。 ★ 10A,600V,RDS(on)(）0.7Ω ★ 、 ★ FHP10N60 （TC=25℃） —

FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET February 2007 FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features • 9A, 600V, RDS(on) = 0.8

FQP10N60-FQPF10N60 600V,10A N-Channel MOSFET General Description Product Summary The FQP10N60 & FQPF10N60 are fabricated using an advanced high vol

STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages TAB 2 3

FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These

www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated

NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

www.DataSheet4U.com SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field e

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low c

FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® Features • 9.5A, 600V, RDS(on) = 0.73Ω

Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mod

SLP10N60C / SLF10N60C SLP10N60C / SLF10N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mod

PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740

MDP10N60G/MDF10N60G N-channel MOSFET 600V MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produc

AP10N60W RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G

600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 54nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant