P10N60 Datasheet | Pinout, Features, Price Comparison & PDF

Free Datasheet http://www.Datasheet4U.com FHP10N60 N MOS 。 AC-DC ，DC-DC，HPMW 。 ★ 10A,600V,RDS(on)(）0.7Ω ★ 、 ★ FHP10N60 （TC=25℃） —

NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These

www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated

WML10N60VD, WMK10N60VD, WMH10N60VD, WMM10N60VD WMN10N60VD, WMO10N60VD, WMP10N60VD, WMG10N60VD 600V 0.8Ω Super Junction Power MOSFET Description WMOST

FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET February 2007 FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features • 9A, 600V, RDS(on) = 0.8

SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low c

FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® Features • 9.5A, 600V, RDS(on) = 0.73Ω

Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mod

MDP10N60G/MDF10N60G N-channel MOSFET 600V MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produc

WML10N60C2, WMK10N60C2, WMM10N60C2 WMN10N60C2, WMP10N60C2, WMO10N60C2 600V 0.61Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

www.DataSheet4U.com SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field e

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

isc N-Channel MOSFET Transistor IXTP10N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche volt

HIGH VOLTAGE N-Channel MOSFET      WFP10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A

FTP10N60C FTA10N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power

Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mod