PE60 Datasheet | Specifications & PDF Download

PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 32A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA =

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PE606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID3 22A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA =

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www.vishay.com PE60 Vishay Sfernice Power Panel 6 W Potentiometer LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models QUICK REFERENCE DATA Multiple modul

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N-Channel Enhancement Mode Power MOSFET PE6018 Description The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with l

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N-Channel Enhancement Mode Power MOSFET PE60N70 Description The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with

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NIKO-SEM N-Channel Enhancement Mode PE606BA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V

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PE6003 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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DIODE MODULE 60A/800V FEATURES * Cathode & Anode Common * 3 Phase Half Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPIC

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PE6020K N-Channel Enhancement Mode Power MOSFET Description The PE6020K uses advanced trench technology and design to provide excellent RDS(ON) with

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PE600SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA =

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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera

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N-Channel Enhancement Mode Power MOSFET Description The PE6058S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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PE606DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 11mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 30A 23A PDFN 3

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PE60R900I ，PE60R900K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and de

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PE601CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V -30V RDS(ON) 22mΩ @VGS = 10V 28mΩ @VGS = -10V ID 20A -19A Channel N P 1

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N-Channel Enhancement Mode Power MOSFET Description The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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N-Channel Enhancement Mode Power MOSFET Description The PE6050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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PE60D58S N-Channel Enhancement Mode Power MOSFET Description The PE60D58S uses advanced trench technology to provide excellent RDS(ON) and low gate c

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