PiP Datasheet | Specifications & PDF Download

< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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< DIPIPM > SLIMDIP-S TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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05027 PHP8.4-PHP500 thru PIP8.4-PIP500 AC POWER BUS VOLTAGE SUPPRESSOR APPLICATIONS ✔ Secondary AC Power Supply ✔ Aircraft & Shipboard AC Power Bus

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M54HC194 M74HC194 4 BIT PIPO SHIFT REGISTER . . . . . . . . HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA

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PTP02N03N 30V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=2.6 mΩ@VGS=10V  Low Gate Charge Minimize Switchin

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PTP03N04N 40V N-Channel MOSFET General Features Proprietary New Trench Technology RDS(ON),typ.=2.1 m Ω@VGS=10V Low Gate Charge Minimize Switching Los

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80V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=4.2 mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fa

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430V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.39 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  F

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40V N-Channel Trench MOSFET General Features Proprietary New Trench Technology RDS(ON),typ.=3.0m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fas

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< DIPIPM > PSS20S92F6-AG PSS20S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  600V / 20A

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Copyrighted material licensed to Fermi National Laboratory by Thomson Scientific, Inc. (www.techstreet.com). This copy downloaded on 2015-05-12 15:14:

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PTW40N50 500V N-Channel MOSFET General Features  Advanced Planar Process  RDS(ON),typ.=85 mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Ru

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< DIPIPM > PSS20S92F6-AG PSS20S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  600V / 20A

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650V N-ch Planar MOSFET General Features  RoHS Compliant  RDS(ON),typ.=1.2 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body

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85V N-Channel MOSFET General Features Proprietary New Trench Technology RDS(ON),typ.=6.9 mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recov

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800V N-Channel MOSFET General Features Proprietary New Planar Technology RDS(ON),typ.=1.5 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recov

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800V N-Channel MOSFET General Features Proprietary New Planar Technology RDS(ON),typ.=1.5 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recov

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PI29FCT520T/2520T PI29FCT521T 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123

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TA1270BF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1270BF PAL / NTSC VIDEO CHROMA AND SYNC PROCESSING SYSTEM FOR PIP / POP / PAP

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500V N-Channel MOSFET General Features Proprietary New Planar Technology RDS(ON),typ.=0.24 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Reco

(29 views)