Power MOSFET Datasheet | Specifications & PDF Download

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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www.vishay.com IRF540 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V

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TDA7851F 4 x 48 W MOSFET quad bridge power amplifier Datasheet - production data ' 0'03  Flexiwatt25 (Horizontal) ' 0'03  Flexiwatt25 (Ver

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STH90N55F4-2 N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Test

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SM4377NSKP Features • 30V/50A, RDS(ON)= 7mΩ (max.) @ VGS=10V RDS(ON)= 9.6mΩ (max.) @ VGS=4.5V • Provide Excellent Qgd x Rds-on • 100% UIS + R Tes

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IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) IRF540 100 V <0.077 Ω s TYPICAL RDS(on)

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VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant;

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SM3307PSQA/SM3307PSQG ® P-Channel Enhancement Mode MOSFET Features · -30V/-33A, RDS(ON) =18mW(max.) @ VGS =-10V RDS(ON) =30mW(max.) @ VGS =-4.5V ·

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Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description The LPM2302 is N-channel logi

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WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

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SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal s

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PD -96175 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Swi

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