Prisemi PNM Datasheet | Specifications & PDF Download

Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N1 is composed by a transistor and a MOSFET Transistor:  Very low c

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 50 MOSFET Product Summary R

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PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PNMT20V6 N-Channel MOSFET D（3） VDS(V) 20 MOSFET Product

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 30 MOSFET Product Summary R

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PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density

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PNMT6N2B Transistor with N-MOSFET Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2B is composed by a transistor and

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Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2 is composed by a transistor and a MOSFET Transistor:  Very low c

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Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N1-LB is composed by a transistor and a MOSFET Transistor:  Very lo

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Description  Trench Power LV MOSFET technology  High density cell design for low RDS(ON)  High Speed switching MOSFET Product Summary VDS(V) 30

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 20 MOSFET Product Summary R

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Description  Trench Power LV MOSFET technology  High Power and current handing capability MOSFET Product Summary VDS(V) 20 RDS(on)(mΩ) 30@VGS = 4

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Description PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resist

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PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@

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Description PNM723T30V01 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistan

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Description The N-channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conv

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@

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Description PNM523T60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistan

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Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.  Trench Power MV MOSFET technology

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