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Prisemi
PNM723T703E0-2 - N-Channel MOSFET
PNM723T703E0-2 N-Channel MOSFET Description PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely hig.
Prisemi
PNMTOF600V4 - N-Channel MOSFET
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 .
Prisemi
PNMT6N1 - Transistor
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N1 is composed by a transistor and a MOSFET Transistor: Very low c.
Prisemi
PNMT6N2 - Transistor
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2 is composed by a transistor and a MOSFET Transistor: Very low c.
Prisemi
PNMUT20V06 - N-Channel MOSFET
Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@.
Prisemi
PNM6N20V10E - N-Channel MOSFET
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 20 MOSFET Product Summary R.
Prisemi
PNMTO600V4 - N-Channel MOSFET
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 .
Prisemi
PNMET20V06 - N-Channel MOSFET
Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@.
Prisemi
PNM523T60V02 - N-Channel MOSFET
Description PNM523T60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistan.
Prisemi
PNMT6N2B - Transistor
PNMT6N2B Transistor with N-MOSFET Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2B is composed by a transistor and .
Prisemi
PNMT6N1-LB - Transistor
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N1-LB is composed by a transistor and a MOSFET Transistor: Very lo.
Prisemi
PNMT20V6 - N-Channel MOSFET
Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.02.
Prisemi
PNM723T30V01 - N-Channel MOSFET
Description PNM723T30V01 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistan.
Prisemi
PNMT50V02E - N-Channel MOSFET
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 50 MOSFET Product Summary R.
Prisemi
PNMT7002E - N-Channel MOSFET
Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. Trench Power MV MOSFET technology .
Prisemi
PNM8P30V20 - N-Channel MOSFET
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 30 MOSFET Product Summary R.
Prisemi
PNMDP60V22 - N-Channel MOSFET
Description The PNMDP60V22 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide vari.
Prisemi
PNMT60V02 - N-Channel MOSFET
PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density .
Prisemi
PNMT3400 - N-Channel MOSFET
Description Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching MOSFET Product Summary VDS(V) 30 .
Prisemi
PNM8P30V12 - N-Channel MOSFET
Description The N-channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conv.
