Pseudo-Static Datasheet | Specifications & PDF Download

IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES D

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hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JUL

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LH5P832 FEATURES • 32,768 × 8 bit organization • Access time: 100/120 ns (MAX.) • Cycle time: 160/190 ns (MIN.) • Power consumption: Operating: 357.5/

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IS66WV1M16EALL IS66/67WV1M16EBLL 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns

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ADVANCE INFORMATION CG6264AM 2Mb (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active pow

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ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.3V •Typical active current: 1 mA @ f = 1

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IS66WV1M16EALL IS66/67WV1M16EBLL 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns

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IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • C

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PRELIMINARY CYU01M16ZCC MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM Features • Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active

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IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • C

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IS66WV51216EALL IS66/67WV51216EBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70n

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IS66WV1M16EALL IS66/67WV1M16EBLL 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns

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ADVANCE INFORMATION CG6258AM 4Mb (256K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active pow

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PRELIMINARY CG6263AM 2Mb (128K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typ

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IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES D

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ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc. Publicat

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ESMT PSRAM www.DataSheet4U.com M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55

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PRELIMINARY CYU01M16SCCU MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM Features • Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active

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