RC-IGBT Datasheet | Specifications & PDF Download

< DIPIPM > SLIMDIP-S TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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Data Sheet HGTG20N60B3 October 2004 40A, 600V, UFS Series N-Channel IGBTs The HGTG20N60B3 is a Generation III MOS gated high voltage switching devic

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FGA60N65SMD — 650 V, 60 A Field Stop IGBT October 2013 FGA60N65SMD 650 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES

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FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS December 2001 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER

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www.DataSheet4U.com PD - 91733A IRG4BC10K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating f

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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N

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HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volta

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FGPF4536 — 360 V PDP Trench IGBT FGPF4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC =

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HGTG30N60B3D Data Sheet www.DataSheet4U.com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a

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FGY75N60SMD — 600 V, 75 A Field Stop IGBT FGY75N60SMD 600 V, 75 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sa

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ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 October 20 ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKŠ 200mJ, 400V, N-Channel Ignition IGBT Gen

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STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES

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