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RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU7088 N-Channel Advanced Power MOSFET MOSFET Features • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/d

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RU7588R N-Channel Advanced Power MOSFET Features • 80V/80A, RDS (ON) =7mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU6199R N-Channel Advanced Power MOSFET Features · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Gr

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Shenzhen Rui Chi Electronics Co., Ltd., KSD-01F/JUC-31 Series 1.Installation size and shape 2.Selling spicifications ITEM 10℃ 15℃ 20℃ 25℃ 30℃ 35℃ 40

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RU75N08R N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capa

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RU6199 N-Channel Advanced Power MOSFET Features Pin Description · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged

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RU6099R N-Channel Advanced Power MOSFET Features • 60V/120A, RDS (ON) =6mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU8080R N-Channel Advanced Power MOSFET MOSFET Features • 80V/80A, RDS (ON) =9mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistan

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RU75N08 N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capabi

(41 views)

RU55110R N-Channel Advanced Power MOSFET MOSFET Features • 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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RU7582R N-Channel Advanced Power MOSFET MOSFET Features • 75V/82A, RDS (ON) =7.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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RU6055R N-Channel Advanced Power MOSFET MOSFET Features • 60V/60A, RDS (ON) =9mΩ (Type) @ VGS=10V,IDS=30A • Ultra Low On-Resistance • Fast Switching

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RU60200R N-Channel Advanced Power MOSFET MOSFET Features • 60V/230A, RDS (ON) =2.5mΩ (Typ.) VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt cap

(39 views)

RU4099R N-Channel Advanced Power MOSFET Features Pin Description · 40V/200A RDS (ON)=2.8mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged

(39 views)

RU3030M2 N-Channel Advanced Power MOSFET Features • 30V/30A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =15mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desig

(39 views)

RU6888R3 N-Channel Advanced Power MOSFET Features • 68V/88A, RDS (ON) =6mΩ(Typ.)@VGS=10V • Insulation Slug(VISO≥1500VAC) • Ultra Low On-Resistance •

(38 views)