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RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU7088 N-Channel Advanced Power MOSFET MOSFET Features • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/d

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Shenzhen Rui Chi Electronics Co., Ltd., KSD-01F/JUC-31 Series 1.Installation size and shape 2.Selling spicifications ITEM 10℃ 15℃ 20℃ 25℃ 30℃ 35℃ 40

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RU7588R N-Channel Advanced Power MOSFET Features • 80V/80A, RDS (ON) =7mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU6199R N-Channel Advanced Power MOSFET Features · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Gr

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RU75N08R N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU20130L N-Channel Advanced Power MOSFET MOSFET Features • 20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V • Super High Dense

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RU7582R N-Channel Advanced Power MOSFET MOSFET Features • 75V/82A, RDS (ON) =7.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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RU6099R N-Channel Advanced Power MOSFET Features • 60V/120A, RDS (ON) =6mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU1HL13L P-Channel Advanced Power MOSFET MOSFET Features • -100V/-13A, RDS (ON) =160mΩ(Typ.)@VGS=-10V RDS (ON) =180mΩ(Typ.)@VGS=-4.5V • Super High De

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RU30100L N-Channel Advanced Power MOSFET MOSFET Features • 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V • Super High Dense

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RU75N08 N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capabi

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RU1H190R N-Channel Advanced Power MOSFET MOSFET Features • 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A • Ultra Low On-Resistance • Exceptional

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RU8205C6 N-Channel Advanced Power MOSFET Features • 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High D

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RU2020H N-Channel Advanced Power MOSFET MOSFET Features • 20V/20A, RDS (ON) =3.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.8mΩ (Typ.) @ VGS=4.5V RDS (ON) =5.6mΩ

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RU2560L N-Channel Advanced Power MOSFET MOSFET Features • 25V/55A, RDS (ON) =8mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.5V • Super High Dense Cell

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RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugge

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RU1088R N-Channel Advanced Power MOSFET Features • 100V/80A RDS (ON)=10mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU65110R N-Channel Advanced Power MOSFET Features • 65V/110A, RDS (ON) =6mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance •

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