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RU6888R - N-Channel Advanced Power MOSFET
RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.RU6888 - N-Channel Advanced Power MOSFET
RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capa.RU40190R - N-Channel Advanced Power MOSFET
RU40190R N-Channel Advanced Power MOSFET MOSFET Features • 40V/190A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi.RU40191S - N-Channel Advanced Power MOSFET
RU40191S N-Channel Advanced Power MOSFET Features • 40V/190A, RDS (ON) =1.8mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance .RU40190S - N-Channel Advanced Power MOSFET
RU40190S N-Channel Advanced Power MOSFET MOSFET Features • 40V/190A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi.RU5H18Q - N-Channel Advanced Power MOSFET
Features •500V/18A, RDS (ON) =0.27Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ. 26pF) • Extremely high dv/dt capability • 100% avalanche.RU6888S - N-Channel Advanced Power MOSFET
RU6888S N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.RU40S4H - P-Channel Advanced Power MOSFET
RU40S4H P-Channel Advanced Power MOSFET MOSFET Features • -40V/-4A, RDS (ON) =65mΩ (Typ.) @ VGS=-10V RDS (ON) =85mΩ (Typ.) @ VGS=-4.5V • Super High D.RU40L10L - P-Channel Advanced Power MOSFET
RU40L10L P-Channel Advanced Power MOSFET MOSFET Features • -40V/-32A, RDS (ON) =20mΩ(Typ.)@VGS=-10V RDS (ON) =30mΩ(Typ.)@VGS=-4.5V • Super High Dense.RU205B - N-Channel Advanced Power MOSFET
RU205B N-Channel Advanced Power MOSFET MOSFET Features • 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V • Low RDS (ON) • S.RU30120R - N-Channel Advanced Power MOSFET
RU30120R N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V • Super High .RU3013H - N-Channel Advanced Power MOSFET
RU3013H N-Channel Advanced Power MOSFET MOSFET Features • 30V/11A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =24mΩ (Typ.) @ VGS=4.5V • Super High Dens.RU6055L - N-Channel Advanced Power MOSFET
RU6055L N-Channel Advanced Power MOSFET MOSFET Features • 60V/60A, RDS (ON) =10mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche teste.RU1H100R - N-Channel Advanced Power MOSFET
RU1H100R N-Channel Advanced Power MOSFET Features • 100V/75A RDS (ON)=11mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Extremely high dv/dt capabilit.RU1H7H - N-Channel Advanced Power MOSFET
Features • 100V/6A, RDS (ON) =40mΩ (Typ.) @ VGS=10V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available RU1H7H N-Cha.RU4H10P - N-Channel Advanced Power MOSFET
Features • 400V/10A, RDS (ON) =0.45Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ. 18pF) • Extremely high dv/dt capability • 100% avalanch.RU80N15R - N-Channel Advanced Power MOSFET
RU80N15R N-Channel Advanced Power MOSFET Features · 150V/80A RDS (ON)=31mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Gre.RU40280R - N-Channel Advanced Power MOSFET
RU40280R N-Channel Advanced Power MOSFET MOSFET Features • 40V/280A, RDS (ON) =1.8mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Fast Switching and .