DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit .
Sanyo Semicon Device
2SK3072 - N-Channel MOSFET
Ordering number : ENN7224 2SK3072 N-Channel Silicon MOSFET 2SK3072 Ultrahigh-Speed Switching Applications Features • • Package Dimensions unit : mm.
Hitachi Semiconductor
2SK3070L - N-Channel MOSFET
2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R.
Hitachi Semiconductor
2SK3076L - N-Channel MOSFET
2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance H.
Toshiba Semiconductor
2SK3077A - N-Channel MOSFET
www.DataSheet4U.com 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm Output.
Hitachi Semiconductor
2SK3070 - N-Channel MOSFET
2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R.
Hitachi Semiconductor
2SK3070S - N-Channel MOSFET
2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R.
Toshiba Semiconductor
2SK3074 - N-Channel MOSFET
2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER (Note)The TOSHIBA pro.
Toshiba Semiconductor
2SK3075 - N-Channel MOSFET
2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier (Note)The TOSHIBA pr.
Hitachi Semiconductor
2SK3076 - N-Channel MOSFET
2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance H.
Hitachi Semiconductor
2SK3076S - N-Channel MOSFET
2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance H.
Toshiba Semiconductor
2SK3079 - N-Channel MOSFET
2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain :.
Diotec Electronics
SK307 - (SK302 - SK310) RECTIFIER DIODE
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. SBDA-302-1B 3 AM.
Toshiba Semiconductor
2SK3079A - N-Channel MOSFET
2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Output power:.
Diotec Electronics
SK3070C - (SK3040C - SK30100C) 3 Amp Schottky Barrier Rectifiers
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Low switching noise Low forward.
Toshiba Semiconductor
2SK3077 - N-Channel MOSFET
www.DataSheet4U.com 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l .
Thomson
SK3079 - Bipolar Transistors
www.DataSheet4U.com www.DataSheet4U.com .
Toshiba Semiconductor
2SK3078 - SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) (Note)The TOSHIBA products liste.
