SK36 Datasheet | Specifications & PDF Download

2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications • • • • Low drain-source ON res

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SK32 THRU SK3B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 3.0 Amperes Features Plastic package has

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isc N-Channel MOSFET Transistor 2SK3646L FEATURES ·Drain Current : ID= 41A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-R

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 2SK369 For Low Noise Audio Amplifier Applications Unit: mm · Suitable for u

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2SK3683-01MR FUJI POWER MOSFET Super FAP-G Series 200309 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanch

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applic

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3664 is a switching device, w

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www.DataSheet4U.com PRELIM INARY 2SK3683-01MR (500V/0.38Ω/19A) 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current G

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2SK3607-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p

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2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications • • • • Low drain-source ON res

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Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4

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isc N-Channel MOSFET Transistor 2SK3680 FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max) ·Fast Switching ·100% avalanche tested ·M

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Uni

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www.DataSheet4U.com 2SK3680-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High spee

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DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3641 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3641 is N-channel MOS FET d

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2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features High speed switching L

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2SK3603-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Aval

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2SK3674-01L,S,SJ (900V/2.0Ω/7A) 1) Package T-PACK L •E•E•ESee Page 2/4 S •E•E•ESee Page 3/4 SJ •E•E•ESee Page 4/4 PRELIMINARY 2) Absolute Maximum Ra

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2SK3673-01MR FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Super FAP-G Series Features High speed switching

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