ST-Semiconductors Datasheet | Specifications & PDF Download

SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a mo

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Silan Microelectronics SGT70N65FDM1P7_Datasheet 70A, 650V FIELD STOP IGBT DESCRIPTION SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the o

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AOK095A60FD 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimiz

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WESTCODE Date:- 13 Nov, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0392WC120 to N0392WC160 Absolute Maximum Ratings VDRM VDSM VRRM V

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WESTCODE Date:- 4 Oct, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0255WC120 to N0255WC160 Absolute Maximum Ratings VDRM VDSM VRRM VR

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WESTCODE Date:- 13 Nov, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0392WC120 to N0392WC160 Absolute Maximum Ratings VDRM VDSM VRRM V

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WESTCODE Date:- 13 Nov, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0392WC120 to N0392WC160 Absolute Maximum Ratings VDRM VDSM VRRM V

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WESTCODE Date:- 4 Oct, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0255WC120 to N0255WC160 Absolute Maximum Ratings VDRM VDSM VRRM VR

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Silan Microelectronics SCDP120R040NP4B_Datasheet 40mΩ, 1200V SiC MOS POWER TRANSISTOR DESCRIPTION SCDP120R040NP4B is an N-channel enhancement mode

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AOK065A60FD 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimiz

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CHKA011aSXA Pout (W) & PAE (%) @ 32dBm Gain (dB) @ 32dBm 130W Power Packaged Transistor GaN HEMT on SiC packaged Description The CHKA011aSXA is an

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WESTCODE Date:- 4 Oct, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0255WC120 to N0255WC160 Absolute Maximum Ratings VDRM VDSM VRRM VR

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Silan Microelectronics SGT75T65SDM1P4_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION SGT75T65SDM1P4 adopts Field Stop III IGBT technology, offer th

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CHK9014-99F 55W Power Transistor GaN HEMT on SiC Description The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product

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Silan Microelectronics SGTP75V120FDB2PW_Datasheet 75A, 1200V FIELD STOP IGBT DESCRIPTION The SGTP75V120FDB2PW field stop IGBT adopts Silan Field Sto

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6DI15S-050 (15A) Features High DC Current Gain High Speed Switching Including Eree Wheeling Diode Insulated Type FUJI POWER TRANSISTOR MODULE Outlin

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Silan Microelectronics SGT75T65SDM1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION SGT75T65SDM1P7 adopts Field Stop III IGBT technology, offer th

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