Slkor Datasheet | Specifications & PDF Download

FAST RECOVER DIODE Features  400V,80A  Soft Recovery  Operation Temperature ＜150℃  Planar Construction Applications  Freewheeling,Snubber,Clamp 

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N-Channel Power MOSFET General Features ● VDS = 20V,ID = 2.8 A RDS(ON) < 85mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing ca

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Silicon Bidirectional Trigger Diodes FEATURES These diacs are intended for use in thyristor phase control. circuits for lamp-dimming. universal-motor

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SL24Cxx Series I2C EEPROM 1. SL 24C02/04/08/16/32/64 PROM 256/512/1024/2048/4096/8192×8-bit 1.8V 1mA SL 24C02/04/08/16/32/64 8/16/16/16/32/32

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SL4949 １、 SL49495VLDO， 。 SL4949 ，100mA， 42V，。 Reset，，Sense， 。Sense， Reset 。 ２、 ：5.5V~42V  80uA； ：5V±1% 100mA 0.4V Reset，； Sense  RoHS SOP

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FAST RECOVER DIODE Features  300V,60A  Soft Recovery  Operation Temperature ＜150℃  Planar Construction Applications  Freewheeling,Snubber,Clamp 

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P-Channel Power MOSFET General Features ● VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High power and current handing

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600V, 40A, Trench NPT IGBT Features  600V,40A  VCE(sat)(typ.)=2.15V@VGE=15V,IC=40A  High speed switching  Higher system efficiency  Soft current

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 5A 650V 2.6Ω 17nC SL5N65    LED APPLICATIONS  High efficiency switch

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SL24Cxx Series I2C EEPROM 1. SL 24C02/04/08/16/32/64 PROM 256/512/1024/2048/4096/8192×8-bit 1.8V 1mA SL 24C02/04/08/16/32/64 8/16/16/16/32/32

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Standard Triac VDRM = 600V IT(RMS) = 16 A ITSM = 168A Features ◆ Repetitive Peakk Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 16 A

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 2A 600V 4.5Ω 9nC SL2N60    LED APPLICATIONS  High efficiency switch m

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P-Channel Power MOSFET General Features ● VDS = -20V,ID = -2.8A RDS(ON) < 142mΩ @ VGS=-2.5V RDS(ON) < 112mΩ @ VGS=-4.5V ● High power and current handi

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 7A 650V 1.4Ω 30nC SL7N65    LED APPLICATIONS  High efficiency switch

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1350V, 15A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=15A z Hig

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1350V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig

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P-Channel Power MOSFET General Features  VDS =-20V,ID =-90A RDS(ON) <2.3 mΩ @ VGS=-10V RDS(ON) <2.6 mΩ @ VGS=-4.5V  Improved dv/dt capability  Fast

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SL24Cxx Series I2C EEPROM 1. SL 24C02/04/08/16/32/64 PROM 256/512/1024/2048/4096/8192×8-bit 1.8V 1mA SL 24C02/04/08/16/32/64 8/16/16/16/32/32

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PWM SL2362A PWM 。、 。 SL2362A ，、、 、、 、VDD 、VDD 、。 SL2362A， 。 ， 65KHz 。 ➢ ACDC ➢ ➢ ➢ （OCP） ➢ ➢ ➢ ➢ ➢ ➢ ➢ SL2362A ，， ，。 ， SL2362A

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N-Channel Super Junction Power MOSFET S65R620 Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small p

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