Slkor Datasheet | Specifications & PDF Download

Dual Line CAN Bus Protector DESCRIPTION The NUP2105L has been designed to protect the CAN transceiver in high-speed and fault tolerant networks from E

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Silicon Bidirectional Trigger Diodes FEATURES These diacs are intended for use in thyristor phase control. circuits for lamp-dimming. universal-motor

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P-Channel Power MOSFET General Features ● VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High power and current handing

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High- Current Low- Dropout Adjustable Regulator MIC29302WU General Description The MIC29302WU is a high current, high accuracy and low-dropout volt

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N-Channel Power MOSFET General Features ● VDS = 20V,ID = 2.8 A RDS(ON) < 85mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing ca

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FAST RECOVER DIODE Features  400V,80A  Soft Recovery  Operation Temperature ＜150℃  Planar Construction Applications  Freewheeling,Snubber,Clamp 

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FAST RECOVER DIODE Features  300V,60A  Soft Recovery  Operation Temperature ＜150℃  Planar Construction Applications  Freewheeling,Snubber,Clamp 

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P-Channel Power MOSFET General Features ● VDS = -20V,ID = -2.8A RDS(ON) < 142mΩ @ VGS=-2.5V RDS(ON) < 112mΩ @ VGS=-4.5V ● High power and current handi

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1350V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig

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IGBT Module Features： z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 1.80V @ IC =200A , TC=25℃ z Low Switching Loss z 100% RBSOA Tes

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 13A 500V 0.48Ω 29nC SL13N50F    LED APPLICATIONS  High efficiency swi

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Standard Triac VDRM = 600V IT(RMS) = 16 A ITSM = 168A Features ◆ Repetitive Peakk Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 16 A

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IGBT Module SL600H 120TL Features： z Low Saturation Voltage: VCE (sat) = 1.80V @ IC = 600A , TC=25℃ z Low Switching Loss z 100% RBSOA Tested（2×Ic） z

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IGBT Module PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive tempe

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600V, 25A, Trench NPT IGBT Features  600V,25A  VCE(sat)(typ.)=1.9V@VGE=15V,IC=25A  High speed switching  Higher system efficiency  Soft current t

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600V, 40A, Trench NPT IGBT Features  600V,40A  VCE(sat)(typ.)=2.15V@VGE=15V,IC=40A  High speed switching  Higher system efficiency  Soft current

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IGBT Module SL450H 120TL Features： z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 1.80V @ IC = 450A , TC=25℃ z Low Switching Loss

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PWM SL2362A PWM 。、 。 SL2362A ，、、 、、 、VDD 、VDD 、。 SL2362A， 。 ， 65KHz 。 ➢ ACDC ➢ ➢ ➢ （OCP） ➢ ➢ ➢ ➢ ➢ ➢ ➢ SL2362A ，， ，。 ， SL2362A

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IGBT Module SL400H 65TL Features： z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 1.50V @ IC = 400A , TC=25℃ z Low Switching Loss z

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 12A 650V 0.73Ω 45nC SL12N65F    LED APPLICATIONS  High efficiency swi

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