Slkor Datasheet | Specifications & PDF Download

Silicon Bidirectional Trigger Diodes FEATURES These diacs are intended for use in thyristor phase control. circuits for lamp-dimming. universal-motor

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N-Channel Power MOSFET General Features ● VDS = 20V,ID = 2.8 A RDS(ON) < 85mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing ca

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 10A 650V 0.94Ω 35nC SL10N65F    LED APPLICATIONS  High efficiency swi

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1350V, 20A, Trench FS IGBT Features z Trench FS( Field Stop) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=20A z High input i

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1350V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig

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SL24Cxx Series I2C EEPROM 1. SL 24C02/04/08/16/32/64 PROM 256/512/1024/2048/4096/8192×8-bit 1.8V 1mA SL 24C02/04/08/16/32/64 8/16/16/16/32/32

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SL24Cxx Series I2C EEPROM 1. SL 24C02/04/08/16/32/64 PROM 256/512/1024/2048/4096/8192×8-bit 1.8V 1mA SL 24C02/04/08/16/32/64 8/16/16/16/32/32

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FAST RECOVER DIODE Features  400V,80A  Soft Recovery  Operation Temperature ＜150℃  Planar Construction Applications  Freewheeling,Snubber,Clamp 

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FAST RECOVER DIODE Features  1200V,20A  Soft Recovery  Operation Temperature ＜175℃  Planar Construction Applications  Switching Power Supplies 

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 2A 600V 4.5Ω 9nC SL2N60    LED APPLICATIONS  High efficiency switch m

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 5A 650V 2.6Ω 17nC SL5N65    LED APPLICATIONS  High efficiency switch

Rating: 1 ★ (3 votes)

P-Channel Power MOSFET General Features ● VDS = -20V,ID = -2.8A RDS(ON) < 142mΩ @ VGS=-2.5V RDS(ON) < 112mΩ @ VGS=-4.5V ● High power and current handi

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P-Channel Power MOSFET General Features ● VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High power and current handing

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P-Channel Power MOSFET General Features  VDS =-60V,ID =-11A RDS(ON) <180 mΩ @ VGS=-10V RDS(ON) <220 mΩ @ VGS=-4.5V  Improved dv/dt capability  Fast

Rating: 1 ★ (3 votes)

IGBT Module SL600H 120TL Features： z Low Saturation Voltage: VCE (sat) = 1.80V @ IC = 600A , TC=25℃ z Low Switching Loss z 100% RBSOA Tested（2×Ic） z

Rating: 1 ★ (3 votes)

1200V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig

Rating: 1 ★ (3 votes)

1200V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig

Rating: 1 ★ (3 votes)

1350V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig

Rating: 1 ★ (3 votes)

Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE FEATURES  Low Forward Voltage Drop  Guard Ring Construction for Transient Protection  Low Reverse

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SL24Cxx Series I2C EEPROM 1. SL 24C02/04/08/16/32/64 PROM 256/512/1024/2048/4096/8192×8-bit 1.8V 1mA SL 24C02/04/08/16/32/64 8/16/16/16/32/32

Rating: 1 ★ (3 votes)