apm Datasheet | Specifications & PDF Download

Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

(13 views)

APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • www.DataSheet4U.com Pin Description 5 / 5 / & % $ # , , , , -20V/-6A, RDS(ON)

(9 views)

APM4317K Features • -30V/-9A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V R DS(ON) = 24mΩ(typ.) @ V GS = -4.5V • Super High Dense Cell Design • Reli

(7 views)

APM2315A P-Channel Enhancement Mode MOSFET Features • -20V/-4A, RDS(ON)=35mΩ (typ.) @ VGS=-4.5V RDS(ON)=45mΩ (typ.) @ VGS=-2.5V RDS(ON)=60mΩ (typ.) @

(6 views)

APM9932/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V Pi

(6 views)

APM9935K Dual P-Channel Enhancement Mode MOSFET Features • -20V/-6A , RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V Pin Description

(6 views)

Datasheet APM32F103xDxE Arm® Cortex®-M3 based 32-bit MCU Version: V 2.0 1 Features  System Architecture - 32-bit Arm® Cortex®-M3 core - 96MHz Maximu

(6 views)

Datasheet APM32F072xBT7 Arm® Cortex®-M0+ based 32-bit MCU Version: V1.0 1 Product Characteristics  Core – 32-bit Arm® Cortex®-M0+Core – Up to 48MHz

(6 views)

AP140N10FIPIT 100V N-Channel Enhancement Mode MOSFET Description The AP140N10P/T uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low

(6 views)

apm8282 / apm8262 Bluetooth Audio Module Production Information apm8282 / apm8262 Bluetooth Audio Module DESCRIPTION APPLICATIONS apm8282 / apm826

(5 views)

APM4015PU P-Channel Enhancement Mode MOSFET Features • -40V/-45A, RDS(ON)= 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V Pin Description

(5 views)

APM4568AK Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VG

(5 views)

APM9948K Dual N-Channel Enhancement Mode MOSFET Features • 60V/4A, R DS(ON) = 60mΩ(typ.) @ V GS = 10V R DS(ON) = 72mΩ(typ.) @ V GS =

(5 views)

APM4550J Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) =

(5 views)

APM4015PU P-Channel Enhancement Mode MOSFET Features Pin Description • -40V/-45A, RDS(ON)= 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V

(5 views)

APM80900 Automotive-Grade, Low-EMI, 1.5 A PWM Dimmable Synchronous Buck LED Module FEATURES AND BENEFITS • Automotive AEC-Q100 qualified • Supply vol

(5 views)

Datasheet APM32E030x8 Arm® Cortex® -M0+ -based 32-bit MCU Version: V1.0 1 Product Characteristics ◼ System Architecture – 32-bit Arm® Cortex®-M0+ cor

(5 views)

sales.Mr.wang13826508770 www.sztssd.com AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology

(5 views)

Description AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET The AP10H03DF uses advanced trench technology to provide excellent RDS(ON), low gate c

(5 views)

Description The AP2312CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

(5 views)