.
INCHANGE
BDY47 - NPN Transistor
isc Silicon NPN Power Transistor BDY47 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC .
INCHANGE
BDY45 - NPN Transistor
isc Silicon NPN Power Transistor BDY45 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC .
Seme LAB
BDY47 - Bipolar NPN Device
BDY47 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .
Fairchild Semiconductor
FDY4000CZ - Complementary N & P-Channel PowerTrench MOSFET
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Chann.
Murata
NDY4815C - DC/DC Converters
www.murata-ps.com NDY Series Isolated 3W Wide Input DC/DC Converters FEATURES UL 60950 recognized RoHS compliant Industry standard footprint .
INCHANGE
BDY48 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide area of safe operation ·100% avalanch.
INCHANGE
BDY49 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Excellent Safe Operating Area ·High Curren.
INCHANGE
BDY44 - NPN Transistor
isc Silicon NPN Power Transistor BDY44 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC .
INCHANGE
BDY43 - NPN Transistor
isc Silicon NPN Power Transistor BDY43 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC .
INCHANGE
BDY42 - NPN Transistor
isc Silicon NPN Power Transistor BDY42 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC .
Micron
EDY4016A - DDR4 SDRAM
DDR4 SDRAM EDY4016A - 256Mb x 16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2.
Fairchild Semiconductor
FDY4001CZ - Complementary N & P-Channel PowerTrench MOSFET
FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Chann.
G24 Innovations
Indy4050 - Dye Sensitised Indoor Photovoltaic Module
Dye Sensitised Indoor Photovoltaic Module B L E X I L E Indy4050 dlong =100mm N.B.Image not to scale data sheet Power connections are.
G24 Innovations
Indy4100 - Dye Sensitised Indoor Photovoltaic Module
Dye Sensitised Indoor Photovoltaic Module B L E X I L E Indy4100 rlong =100mm N.B.Image not to scale data sheet Power connections are suitable f.
G24 Innovations
Indy4200 - Dye Sensitised Indoor Photovoltaic Module
Dye Sensitised Indoor Photovoltaic Module B L E X I L E Indy4200 dlong =100mm N.B.Image not to scale data sheet Power connections are.
Seme LAB
BDY46 - Bipolar NPN Device
BDY46 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .
INCHANGE
BDY46 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BDY46 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC .
