dy4 Datasheet | Specifications & PDF Download

www.murata-ps.com NDY Series Isolated 3W Wide Input DC/DC Converters FEATURES „UL 60950 recognized „RoHS compliant „Industry standard footprint „

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www.murata-ps.com NDY Series Isolated 3W Wide Input DC/DC Converters FEATURES „UL 60950 recognized „RoHS compliant „Industry standard footprint „

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www.murata-ps.com NDY Series Isolated 3W Wide Input DC/DC Converters FEATURES „UL 60950 recognized „RoHS compliant „Industry standard footprint „

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BDY47 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

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www.murata-ps.com NDY Series Isolated 3W Wide Input DC/DC Converters FEATURES „UL 60950 recognized „RoHS compliant „Industry standard footprint „

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www.murata-ps.com NDY Series Isolated 3W Wide Input DC/DC Converters FEATURES „UL 60950 recognized „RoHS compliant „Industry standard footprint „

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isc Silicon NPN Power Transistor BDY45 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC

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isc Silicon NPN Power Transistor BDY43 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Excellent Safe Operating Area ·High Curren

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isc Silicon NPN Power Transistor BDY42 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC

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FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Chann

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide area of safe operation ·100% avalanch

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isc Silicon NPN Power Transistor BDY44 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC

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FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Chann

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BDY46 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

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DDR4 SDRAM EDY4016A - 256Mb x 16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2

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isc Silicon NPN Power Transistor BDY47 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC

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Dye  Sensitised  Indoor  Photovoltaic  Module B L E X I L E Indy4200 dlong  =100mm N.B.Image  not  to  scale data  sheet Power  connections  are

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