N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.5A, RD.

Pin Description ( SOT-363 ) AFC6332 20V N & P Pair Enhancement Mode MOSFET Features N-Channel 20V/1.0A,RDS(ON)=280mΩ@V.

AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

&P-Channel

AFC6332ES

AFC6601

AFC6602

AFC6604

AFC6606W

AFC6610W

AFC0612DB-F00

AFC0912DB-F00

AFC0912DE-7X60

AFC0912DE-AF00

AFC1016

AFC1016E

AFC2517W