AFC6601 - N&P-Channel MOSFET

This page provides the datasheet information for the AFC6601, a member of the AFC6601-Alfa N&P-Channel MOSFET family.

Product Overview

Alfa-MOS

Datasheet Details

Part number	AFC6601
Manufacturer	Alfa-MOS
File Size	659.26 KB
Description	N&P-Channel MOSFET
Datasheet	AFC6601 Datasheet
Additional preview pages of the AFC6601 datasheet.

AFC6601 Product details

Description

AFC6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

N-Channel 30V/3.4A,RDS(ON)=46mΩ@VGS=10V 30V/3.0A,RDS(ON)=58mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=125mΩ@VGS=2.5V.
P-Channel -30V/-2.6A,RDS(ON)=110mΩ@VGS=-10.0V -30V/-2.0A,RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=150mΩ@VGS=-2.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TSOP-6 package design Pin.

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Published: Dec 1, 2018 |