AFN3112W mosfet equivalent, 100v n-channel enhancement mode mosfet.
* ID=3.6A,RDS(ON)=105mΩ@VGS=10V
* ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance a.
Features
* ID=3.6A,RDS(ON)=105mΩ@VGS=10V
* ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
* Super high density cell design.
AFN3112W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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