AFN4804S Alfa-MOS

• 40V/16A,RDS(ON)= 48mΩ@VGS=10V
• 40V/10A,RDS(ON)= 70mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS (ON)
• TO-252-2L package design A.

Pin Description ( TO-252-2L ) AFN4804S 40V N-Channel Enhancement Mode MOSFET Features
• 40V/16A,RDS(ON)= 48mΩ@VGS=.