AFN6800WS mosfet equivalent, n-channel mosfet.
30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/3.2A,RDS(ON)=38mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package desig.
Pin Description ( TSOP-6 )
AFN6800WS
30V N-Channel Enhancement Mode MOSFET
Features
30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/.
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