AFN6802WS mosfet equivalent, n-channel mosfet.
30V/4.0A,RDS(ON)=28mΩ@VGS=10V 30V/2.8A,RDS(ON)=32mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
Power Management.
Pin Description ( TSOP-6 )
AFN6802WS
30V N-Channel Enhancement Mode MOSFET
Features
30V/4.0A,RDS(ON)=28mΩ@VGS=10V 30V/.
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