AFN6820 mosfet equivalent, n-channel mosfet.
20V/3.4A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=68mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=88mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TSOP-6 package desi.
Pin Description ( TSOP-6 )
AFN6820
20V N-Channel Enhancement Mode MOSFET
Features
20V/3.4A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.
AFN6820, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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