AFN6830 Datasheet, Alfa-MOS

* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=85mΩ@VGS=4.5V
* 30V/2.2A,RDS(ON)=155mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS .

Pin Description ( TSOP-6 ) AFN6830 30V N-Channel Enhancement Mode MOSFET Features
* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V .

AFN6830, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.