Datasheet Details
| Part number | AO4812 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.10 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AO4812 Download (PDF) |
|
|
| Part number | AO4812 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.10 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AO4812 Download (PDF) |
|
|
|
The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 100% UIS Tested 100% Rg Tested 30V 6A < 30mW < 42mW Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6 5 30 10 5 2 1.3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 9.1: March 2024 www.aosmd.com Page 1 of 5 AO4812 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VDS=5V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current V 1 mA 5 ±100 nA 1.8 2.4 V A 25 30 mW 40 48 33 42 mW 15 S 0.76 1 V 2.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Cos
AO4812 30V Dual N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4812 | Dual N-Channel MOSFET | Kexin |
 |
AO4812 | Dual N-Channel 30V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4812A | Dual N-Channel MOSFET |
| AO4813 | 30V Dual P-Channel MOSFET |
| AO4815 | Dual P-Channel MOSFET |
| AO4816 | Dual N-Channel MOSFET |
| AO4817 | Dual P-Channel MOSFET |
| AO4818 | 30V Dual N-channel MOSFET |
| AO4818B | 30V Dual N-channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |