Datasheet Details
| Part number | AO4840 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 228.83 KB |
| Description | 40V Dual N-Channel MOSFET |
| Download | AO4840 Download (PDF) |
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| Part number | AO4840 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 228.83 KB |
| Description | 40V Dual N-Channel MOSFET |
| Download | AO4840 Download (PDF) |
|
|
|
The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
This dual device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 6A < 30mW < 38mW Top View SOIC-8 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 6 5 30 14 10 2 1.3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 www.aosmd.com Page 1 of 5 AO4840 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.7 2.5 3 V ID(ON) On state drain current VGS=10V, VDS=5V 30 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A TJ=125°C 24 30 mW 36 45 VGS=4.5V, ID=5A 30 38 mW gFS Forward Transconductance VDS=5V, ID=6A 27 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 1 V IS Maximum Body-Diode Continuous Current 2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss
AO4840 40V Dual N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4840 | 60V Dual N-Channel MOSFET | VBsemi |
 |
AO4840 | Dual N-Channel MOSFET | Kexin |
| UMW | AO4840 | Dual 40V N-ChanneI MOSFET | UMW |
| EVVOSEMI | AO4840 | 60V Dual N-Channel MOSFET | EVVOSEMI |
| Part Number | Description |
|---|---|
| AO4842 | 30V Dual N-Channel MOSFET |
| AO4844 | Dual N-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |