Datasheet Details
| Part number | AO4852 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 165.40 KB |
| Description | 60V Dual N-Channel MOSFET |
| Download | AO4852 Download (PDF) |
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| Part number | AO4852 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 165.40 KB |
| Description | 60V Dual N-Channel MOSFET |
| Download | AO4852 Download (PDF) |
|
|
|
The AO4852 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies.
Product Summary VDS (V) = 60V ID = 3.5A (VGS = 10V) RDS(ON) <90mΩ (VGS = 10V) RDS(ON) <105mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 D1 D2 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 3.5 3 Current A TA=70°C ID 2.8 2.4 Pulsed Drain Current B IDM 20 Power Dissipation TA=25°C TA=70°C PD Avalanche Current B IAR Repetitive avalanche energy 0.3mH B EAR 2 1.4 1.3 0.9 8 9.6 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A W A mJ °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ Max 48 62.5 74 90 33 40 Units °C/W °C/W °C/W AO4852 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 20 VGS=10V, ID=3A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=3A VSD Diode Forward Voltage ISM Pulsed Body-Diode CurrentB IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistanc
AO4852 60V Dual N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4852 | 60V Dual N-Channel MOSFET | VBsemi |
 |
AO4852 | Dual N-Channel MOSFET | Kexin |
 |
AO4852 | N-Channel MOSFET | FreesCale |
|
AO4852-HF | Dual N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4850 | Dual N-Channel MOSFET |
| AO4854 | Dual N-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |