Datasheet Details
| Part number | AO6403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 365.56 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet |
 AO6403 Datasheet
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| Part number | AO6403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 365.56 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet |
AO6403 Datasheet
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Product Summary The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) -30V -6A < 35mW < 58mW TSOP6 Top View Bottom View D Top View Pin1 D1 D2 G3 6D 5 D 4S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6 -5 -30 2 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 47.5 74 37 Max 62.5 110 50 Units V V A W °C Units °C/W °C/W °C/W Rev 4.1: August 2023 www.aosmd.com Page 1 of 5 AO6403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 mA -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.3 -1.85 -2.4 V ID(ON) On state drain current VGS=-10V, VDS=-5V -30 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A TJ=125°C 22 35 mW 32 39 VGS=-4.5V, ID=-5A 34 58 mW gFS Forward Transconductance VDS=-5V, ID=-6A 18 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.8 -1 V IS Maximum Body-Diode Continuous Current -2.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 760 pF 140 pF 9
AO6403 30V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO6403 | P-Channel MOSFET | VBsemi |
 |
AO6403 | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO6400 | 30V N-Channel MOSFET |
| AO6401 | 30V P-Channel MOSFET |
| AO6401A | P-Channel MOSFET |
| AO6402 | 30V N-Channel MOSFET |
| AO6402A | 30V N-Channel MOSFET |
| AO6402L | N-Channel MOSFET |
| AO6404 | N-Channel MOSFET |
| AO6405 | 30V P-Channel MOSFET |
| AO6407 | P-Channel MOSFET |
| AO6408 | N-Channel MOSFET |