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AO6604L Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

Download the AO6604L datasheet PDF. This datasheet also includes the AO6604 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO6604_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

The AO6604 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO6604L( Green Product ) is offered in a lead-free package.

Overview

Rev 2: Nov 2004 AO6604, AO6604L ( Green Product ) Complementary Enhancement Mode Field Effect.

Key Features

  • n-channel p-channel -20V VDS (V) = 20V -2.5A ID = 3.4A RDS(ON) < 60m Ω < 110mΩ (VGS = 4.5V) < 75m Ω < 140mΩ (VGS = 2.5V) < 100m Ω < 200mΩ (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -20 ±8 -2.5 -2.0 -15 1.15 0.73 -55 to 150.