AO8403 - P-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8403
Manufacturer	Alpha & Omega Semiconductors
File Size	139.74 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8403_AlphaOmegaSemiconductors.pdf

The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -20V ID = -4 A (VGS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 52mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D S S G 1 2 3 4 8 7 6 5 D S S D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4 -3.5 -30 1.5 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD.

📁 AO8403 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

Published: Aug 29, 2009 |