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AO8816 Datasheet - Alpha & Omega Semiconductors

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8816 Features

* VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5) RDS(ON) < 23mΩ (VGS = 2.5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltag

AO8816 General Description

The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO8816 is Pb-free (meets ROHS & Sony 259 specifications). AO8816L is a G.

AO8816 Datasheet (140.91 KB)

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Datasheet Details

Part number:

AO8816

Manufacturer:

Alpha & Omega Semiconductors

File Size:

140.91 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

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AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

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