AO8846 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8846
Manufacturer	Alpha & Omega Semiconductors
File Size	259.20 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8846_AlphaOmegaSemiconductors.pdf

The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

VDS = 20V ID = 7.0A (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.0V) RDS(ON) < 21mΩ (VGS = 3.1V) RDS(ON) < 22mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.8KΩ D1 D2 G2 1.8KΩ S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Steady State 20 ±8 5.7 4.

📁 AO8846 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor
AO8808 - Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808A - 20V Dual N-Channel MOSFET
AO8810 - 20V Common-Drain Dual N-Channel MOSFET
AO8814 - 20V Common-Drain Dual N-Channel MOSFET
AO8816 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Published: Aug 29, 2009 |