Datasheet4U Logo Datasheet4U.com

PE8250K - N-Channel Enhancement Mode Power MOSFET

Description

The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 20V, ID = 50A RDS(ON) < 6mΩ @ VGS=4.5V RDS(ON) < 8mΩ @ VGS=2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE8250K
Manufacturer ChipSourceTek
File Size 696.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8250K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE8200 N-Channel Enhancement Mode Power MOSFET semi one
PE8200 Trimer PE
PE8203 N-Channel Enhancement Mode Power MOSFET semi one
PE8203A N-Channel Enhancement Mode Power MOSFET semi one
PE8205 N-Channel Enhancement Mode Power MOSFET semi one

Other Datasheets by ChipSourceTek

Part Number Description
PE8250M N-Channel Enhancement Mode Power MOSFET
PE8205 N-Channel Enhancement Mode Power MOSFET
PE8205A N-Channel Power MOSFET
PE8205L N-Channel Power MOSFET
PE8207 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE8250K N-Channel Enhancement Mode Power MOSFET Description The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 20V, ID = 50A RDS(ON) < 6mΩ @ VGS=4.5V RDS(ON) < 8mΩ @ VGS=2.
Published: |