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CY62168GE - 16-Mbit (2M words x 8 bits) Static RAM

Download the CY62168GE datasheet PDF (CY62168G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 16-mbit (2m words x 8 bits) static ram.

Description

CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Features

  • Ultra-low standby power.
  • Typical standby current: 5.5 A.
  • Maximum standby current: 16 A.
  • High speed: 45 ns/55 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0 V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 48-ball VFBGA package Functio.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62168G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) Features ■ Ultra-low standby power ❐ Typical standby current: 5.5 A ❐ Maximum standby current: 16 A ■ High speed: 45 ns/55 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0 V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 48-ball VFBGA package Functional Description CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
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