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SBP13007A Datasheet Preview

SBP13007A Datasheet

High Voltage Fast-Switching NPN Power Transistor

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SemiWell Semiconductor
SBP13007A
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 60ns@5.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 390mV@5.0A/1.0A)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching mode power
supply.
Symbol
1.Base
2.Collector
3.Emitter
TO-220
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP 5 ms )
Base Current
Base Peak Current ( tP 5 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 65 ~ 150
150
Value
1.56
62.5
Mar, 2003. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
1/6




ETC

SBP13007A Datasheet Preview

SBP13007A Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

SBP13007A
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
ICEV
VCEO(sus)
VCE(sat)
Collector Cut-off Current
( VBE = - 1.5V )
Collector-Emitter Sustaining Voltage
( IB = 0 )
Collector-Emitter Saturation Voltage
VCE = 700V
VCE = 700V
IC = 10 mA
IC = 2.0A
IC = 5.0A
IC = 8.0A
IC = 5.0A
VBE(sat) Base-Emitter Saturation Voltage
IC = 2.0A
IC = 5.0A
IC = 5.0A
hFE DC Current Gain
Resistive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
IC = 2.0A
IC = 5.0A
IC = 5.0A
IB1 = 1.0A
TP = 25
VCC = 15V
IB1 = 1.0A
LC = 0.35mH
VCC = 15V
IB1= 1.0A
LC = 0.35mH
TC = 100 °C
IB = 0.4A
IB = 1.0A
IB = 2.0A
IB = 1.0A
TC = 100 °C
IB = 0.4A
IB = 1.0A
IB = 1.0A
TC = 100 °C
VCE = 5V
VCE = 5V
VCC = 125V
IB2 = - 1.0A
IC = 5.0A
IB2 = -2.5A
Vclamp = 300V
IC = 5.0A
IB2 = -2.5A
Vclamp = 300V
TC = 100 °C
Min
-
400
-
-
10
5
-
-
-
Typ Max Units
-
1.0
5.0
mA
--V
0.5
1.0
- 2.5 V
2.5
1.2
-
1.6
1.5
V
40
- 40
1.5 3.0
0.17 0.4
0.8 2.0
0.06 0.12
1.0 3.0
0.07 0.15
Notes :
Pulse Test : Pulse width 300, Duty cycle 2%
2/6


Part Number SBP13007A
Description High Voltage Fast-Switching NPN Power Transistor
Maker ETC
Total Page 6 Pages
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