M13S2561616A Datasheet 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

Manufacturer: Elite Semiconductor Memory Technology

Datasheet Details

Part number	M13S2561616A
Manufacturer	Elite Semiconductor Memory Technology
File Size	753.94 KB
Description	4M x 16 Bit x 4 Banks Double Data Rate SDRAM
Datasheet	M13S2561616A Datasheet

www.DataSheet4U.com ESMT Revision History Revision 0.1 (28 Apr.

2006) - Original M13S2561616A Revision 1.0 (07 Jun.

2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May.

z z z z z z z z z z z z z z z z z z z z M13S2561616A 4M x 16 Bit x 4 Banks Double Data Rate SDRAM JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition Quad bank operation CAS Latency : 2; 2.5; 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8 All inputs except data & DM are sampled at the rising edge.

Part Number	Description	Manufacturer
M13S2561616A-4BG2T	4M x 16 Bit x 4 Banks Double Data Rate SDRAM	ESMT
M13S2561616A-4TG2T	4M x 16 Bit x 4 Banks Double Data Rate SDRAM	ESMT
M13S2561616A-5BG2T	4M x 16 Bit x 4 Banks Double Data Rate SDRAM	ESMT
M13S2561616A-5TG2T	4M x 16 Bit x 4 Banks Double Data Rate SDRAM	ESMT
M13S2561616A-6BG2T	4M x 16 Bit x 4 Banks Double Data Rate SDRAM	ESMT

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