Datasheet Details
| Part number | EMP29N04AS |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 534.54 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMP29N04AS-ExcellianceMOS.pdf |
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Overview: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMP29N04AS |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 534.54 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMP29N04AS-ExcellianceMOS.pdf |
|
|
|
: N-CH BVDSS 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.6mΩ 4.8mΩ ID @TC=25℃ 83.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C TC = 100 °C ID Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TA = 25 °C TA = 70 °C ID IDM IAS L = 0.1mH EAS L = 0.05mH EAR Power Dissipation Power Dissipation TC = 25 °C TC = 100 °C PD TA = 25 °C TA = 70 °C PD Operating Junction & Storage Temperature Range Tj, Tstg ▪100% UIS testing in condition of VD=20V, L=0.1mH, VG=10V, IL=44A, Rated VDS=40V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJC Junction-to-Ambient3 RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 375°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test 2020/7/20 A.1 EMP29N04AS LIMITS ±20 83 52 16 13 196 56 156.8 78.4 41.7 16.7 1.7 1.1 -55 to 150 UNIT V A mJ W W °C MAXIMUM 3 75 UNIT °C/W P.1 EMP29N04AS ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 40 VDS = VGS, ID = 250uA 1 VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS =28V, VGS =0V, TJ = 125 °C VDS = 10V, VGS = 10V 83 VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A VDS = 5V, ID = 20A DYNAMIC Input Capacitance5 Output Capacitance5 Reverse Transfer Capacitance5 Gate Resista
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