MMBF170 Datasheet N-Channel Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Datasheet Details

Part number	MMBF170
Manufacturer	Fairchild (now onsemi)
File Size	1.25 MB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	MMBF170 Datasheet

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications requiring up to 500mA DC.

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor.

High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170 VDSS VDGR VGSS ID Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage Drain Current - Continuous - Pulsed 500 1200 60 60 ± 20 500 800 TJ, TSTG TL Operating and Storage Temp.

Part Number	Description	Manufacturer
MMBF170	N-channel MOSFET	ON Semiconductor
MMBF170	N-Channel MOSFET	Diodes Incorporated
MMBF170L	N-Channel MOSFET	ON Semiconductor
MMBF170LT1	TMOS FET Transistor	Motorola
MMBF170Q	N-Channel MOSFET	Diodes