MMBF170 transistor equivalent, n-channel enhancement mode field effect transistor.
* High density cell design for low RDS(ON).
* Voltage controlled small signal switch.
* Rugged and reliable.
* High saturation current capability.
BS170
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requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small.
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switc.
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