MMBF170 Datasheet - Fairchild

N-Channel Enhancement Mode Field Effect Transistor

MMBF170 Features

* High density cell design for low RDS(ON).

* Voltage controlled small signal switch.

* Rugged and reliable.

* High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170

MMBF170 General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applica.

MMBF170 Datasheet (1.25 MB)

MMBF170 Datasheet Preview — Preview of MMBF170 PDF

Datasheet Details

Part number:

MMBF170

Manufacturer:

Fairchild

File Size:

1.25 MB

Description:

N-channel enhancement mode field effect transistor.
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Trans.

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MMBF170 N-Channel Enhancement Mode Field Effect Transistor Fairchild

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MMBF170 Features

MMBF170 General Description

Datasheet Details

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