MMBF170 - N-Channel Enhancement Mode Field Effect Transistor

Fairchild

The MMBF170 by Fairchild is a N-Channel Enhancement Mode Field Effect Transistor. Below is the official datasheet preview.

Datasheet Details

Part number	MMBF170
Manufacturer	Fairchild
File Size	1.25 MB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	MMBF170_FairchildSemiconductor.pdf
Additional preview pages of the MMBF170 datasheet.

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170 VDSS VDGR VGSS ID Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage Drain Current - Continuous - Pulsed 500 1200 60 60 ± 20 500 800 TJ, TSTG TL Operating and Storage Temp.

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Published: May 9, 2005 |