NDC652P mosfet equivalent, p-channel mosfet.
-2.4A, -30V. RDS(ON) = 0.18Ω @ VGS = -4.5V RDS(ON) = 0.11Ω @ VGS = -10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electric.
such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in.
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These d.
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