4.5 A, 20 V. RDS(ON) = 0.060 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capabili.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior .

NDS9933A

NDS9936

NDS9945

NDS9947

NDS9948

NDS9948-NL

NDS9952A

NDS9953A

NDS9955

NDS9956A

NDS9957

NDS9958

NDS9959