NDS9955 Datasheet - Fairchild

Dual N-Channel MOSFET

NDS9955 Features

* 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-22

NDS9955 General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particula.

NDS9955 Datasheet (196.46 KB)

NDS9955 Datasheet Preview — Preview of NDS9955 PDF

Datasheet Details

Part number:

NDS9955

Manufacturer:

Fairchild

File Size:

196.46 KB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

NDS9952A Dual N&P-Channel MOSFET (Fairchild)

NDS9953A Dual P-Channel MOSFET (Fairchild)

NDS9956A Dual N-Channel MOSFET (Fairchild)

NDS9957 Dual N-Channel MOSFET (Fairchild)

NDS9958 Dual N&P-Channel MOSFET (Fairchild)

NDS9959 Dual N-Channel MOSFET (Fairchild)

NDS9959-NL Dual N-Channel MOSFET (VBsemi)

NDS9925A Dual N-Channel MOSFET (Fairchild)

NDS9933A Dual P-Channel MOSFET (Fairchild)

NDS9936 Dual N-Channel MOSFET (Fairchild)

TAGS

NDS9955 Dual N-Channel MOSFET Fairchild

Image Gallery

NDS9955 Features

NDS9955 General Description

Datasheet Details

File Size:

Description:

NDS9955 Distributor