NDS9958 mosfet equivalent, dual n&p-channel mosfet.
N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V. P-Channel -3.5A , -20V, RDS(ON) = 0.1Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and c.
such as notebook computer power management, Half bridge motor control, cellular phone, and other battery powered circuit.
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide.
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&P-Channel
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