NDT410EL mosfet equivalent, n-channel mosfet.
2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount packa.
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, pro.
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