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NDT410EL Datasheet - Fairchild

N-Channel MOSFET

NDT410EL Features

* 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D D G D S G S ABSOLUTE MA

NDT410EL General Description

Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand.

NDT410EL Datasheet (228.26 KB)

Preview of NDT410EL PDF

Datasheet Details

Part number:

NDT410EL

Manufacturer:

Fairchild

File Size:

228.26 KB

Description:

N-channel mosfet.

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NDT410EL N-Channel MOSFET Fairchild

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