-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a.

such as notebook computer power management and DC motor control. Features -5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(.

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide supe.

NDT452P

NDT451

NDT451AN

NDT451N

NDT453N

NDT454P

NDT455N

NDT456P

NDT410EL

NDT014

NDT014L

NDT01N60

NDT01N60T1G