FDC636P Datasheet - Fairchild Semiconductor

P-Channel MOSFET

FDC636P Features

* -2.8 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SO

FDC636P General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

FDC636P Datasheet (198.20 KB)

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Part number:

FDC636P

Manufacturer:

Fairchild Semiconductor

File Size:

198.20 KB

Description:

P-channel mosfet.

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FDC636P P-Channel MOSFET Fairchild Semiconductor

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FDC636P Features

FDC636P General Description

Datasheet Details

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