FDC636P Key Features
- 2.8 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V. SuperSOTTM-6 package design using coppe
- Part: FDC636P
- Description: P-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 198.20 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FDC6301N | Dual N-Channel / Digital FET |
| FDC6302P | Digital FET/ Dual P-Channel |
| FDC6303N | Dual N-Channel Digital FET |
| FDC6304P | Digital FET/ Dual P-Channel |
| FDC6305N | Dual N-Channel MOSFET |