FDC658AP - MOSFET

Fairchild Semiconductor

FDC658AP Datasheet Preview — Preview of FDC658AP PDF

Datasheet Details

Part number	FDC658AP
Manufacturer	Fairchild ↗ Semiconductor
File Size	245.87 KB
Description	MOSFET
Datasheet	FDC658AP-FairchildSemiconductor.pdf

FDC658AP Product details

Description

This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. Battery management Load switch Battery protection DC/DC conversion

Features

Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A.
Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A.
Low Gate Charge.
High performance trench technology for extremely low rDS(on).
RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Parameter Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power dissipation Operating and St.

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Other Datasheets by Fairchild Semiconductor

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Published: Jan 11, 2017 |