FDC658AP - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC658AP
Manufacturer	Fairchild Semiconductor
File Size	245.87 KB
Description	MOSFET
Datasheet	FDC658AP Datasheet
Additional preview pages of the FDC658AP datasheet.

Product details

Description

This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. Battery management Load switch Battery protection DC/DC conversion

Features

Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A.
Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A.
Low Gate Charge.
High performance trench technology for extremely low rDS(on).
RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Parameter Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power dissipation Operating and St.

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Other Datasheets by Fairchild Semiconductor

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Published: Jan 11, 2017 |