FDC658AP
Description
This P-Channel Logic Level MOSFET is produced using Fairchild's advanced Power Trench process. It has been optimized for battery power management applications.
Applications
- Battery management
- Load switch
- Battery protection
- DC/DC conversion
Features
- Max r DS(on) = 50 m: @ VGS = -10 V, ID = -4A
- Max r DS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
- Low Gate Charge
- High performance trench technology for extremely low r DS(on)
- Ro HS pliant
PIN 1
G D D Super SOTTM-6
2 3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed Maximum Power dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a) (Note 1b)
Thermal Characteristics
RTJA...
