Datasheet Details
| Part number | FDC658AP |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 245.87 KB |
| Description | Single P-Channel Logic Level MOSFET |
| Datasheet |
 FDC658AP Datasheet
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General Description
This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process.
It has been optimized for battery power management applications.
Battery management Load switch Battery protection DC/DC conversionKey Features
- Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A.
- Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A.
- Low Gate Charge.
- High performance trench technology for extremely low rDS(on).
- RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Parameter Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power dissipation Operating and St.
