FDG6306P mosfet equivalent, p-channel 2.5v specified powertrench mosfet.
*
–0.6 A,
–20 V.
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
* Compact industry stand.
wi th a wide range of gate drive voltage (2.5V
– 12V).
Features
*
–0.6 A,
.
This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V
– 12V).
.
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