FDG6306P - P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

The FDG6306P by Fairchild Semiconductor is a P-Channel 2.5V Specified PowerTrench MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	FDG6306P
Manufacturer	Fairchild Semiconductor
File Size	61.66 KB
Description	P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDG6306P_FairchildSemiconductor.pdf
Additional preview pages of the FDG6306P datasheet.

This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. 12V).

0.6 A,.
20 V.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS =.
4.5 V RDS(ON) = 630 mΩ @ V GS =.
2.5 V.

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Published: Mar 30, 2005 |