FDG6306P
Description
This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
Key Features
- 0.6 A, –20 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS = –4.5 V RDS(ON) = 630 mΩ @ V GS = –2.5 V
Applications
- Battery management
