FDMC8676 Datasheet | Fairchild Semiconductor

FDMC8676 N-Channel Power Trench® MOSFET December 2007 N-Channel Power Trench MOSFET 30V, 18A, 5.9mΩ Features - Max r DS(on) = 5.9mΩ at VGS = 10V, ID = 14.7A - Max r DS(on) = 9.3mΩ at VGS = 4.5V, ID = 11.5A - Low Profile - 1mm max in Power 33 - Ro HS pliant ® tm General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various ponents of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low r DS(on) has been maintained to provide an extremely versatile device. Applications - High efficiency DC-DC converter - Notebook DC-DC conversion - Multi purpose point of load Top S S S G D D D D D D D 6 7 8 3 2 1 S S S Pin 1 D 5 4 G Bottom Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD EAS TJ, TSTG Power Dissipation Power Dissipation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 18 66 16 60 41 2.3 216 -55 to +150 W m J °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 °C/W Package Marking and Ordering Information Device Marking FDMC8676 Device FDMC8676 Package Power 33 Reel Size 13’’ Tape Width 12mm Quantity 3000units ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C .fairchildsemi. Free Datasheet http://../ FDMC8676 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise...