FDMC8678S N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC8678S N-Channel Power Trench® SyncFETTM July 2009 FDMC8678S N-Channel Power Trench 30V, 18A, 5.2mΩ .
tm The FDMC8678S has been designed to minimize losses in power conversion applications.

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Datasheet Specifications

Part number: FDMC8678S
Manufacturer: Fairchild Semiconductor
File Size: 385.24 KB
Datasheet: FDMC8678S_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* SyncFET Schottky Body Diode
* MSL1 robust package design
* RoHS Compliant ® Sy

Applications

* Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters

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FDMC8678S N-Channel Power Trench MOSFET Fairchild Semiconductor

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