FDMC86116LZ N-Channel Power MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 100 V, 7.5 A, 103 mW FDMC86116LZ, FDMC86116LZ-L701 General .
This N. Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC86116LZ
Manufacturer: ON Semiconductor ↗
File Size: 576.97 KB
Datasheet: FDMC86116LZ-ONSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A
* Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* HBM ESD Protection Level > 3 kV Typical (Note 1)
* 100% UIL Tested
* These Devices are Pb

Applications

* DC
* DC Conversion DATA SHEET www. onsemi. com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DQ FDMC3612
* L701 PIN ASSIGNMENT S1 S2 S3 G4 8D 7D 6D 5D 1. The diode connected between gat

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FDMC86116LZ N-Channel Power MOSFET ON Semiconductor

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