FDMC8676 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC8676 N-Channel PowerTrench® MOSFET December 2007 FDMC8676 N-Channel PowerTrench MOSFET 30V, 18A, 5.9mΩ .
This device has been designed specifically to improve the efficiency of DC/DC converters.

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Datasheet Specifications

Part number: FDMC8676
Manufacturer: Fairchild Semiconductor
File Size: 370.37 KB
Datasheet: FDMC8676_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 5.9mΩ at VGS = 10V, ID = 14.7A
* Max rDS(on) = 9.3mΩ at VGS = 4.5V, ID = 11.5A
* Low Profile - 1mm max in Power 33

Applications

* High efficiency DC-DC converter
* Notebook DC-DC conversion
* Multi purpose point of load Top S S S G D D D D D D D 6 7 8 3 2 1 S S S Pin 1 D 5 4 G Bottom Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Ga

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FDMC8676 N-Channel Power Trench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMC8676-like datasheet