FDMC8678S Key Features
- Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A
- Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- SyncFET Schottky Body Diode
- MSL1 robust package design
- RoHS pliant